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Hynix keeps up with the competition with the release of DDR2 SDRAM
It looks like the race for the leader begins: following Micron, which reported
about the beginning of serial production and Elpida, which began
deliveries of the first modules based on DDR2 SDRAM chips, Korean Hynix
confirmed its readiness to start mass production of DDR2 SDRAM chips in
Q1 2021. To date, the company’s chips made using
0.11-micron process technology, certified
Intel to use this memory on systems with Intel processors.
Like its American and Japanese competitors, the Korean company will launch
512 Mbit (64×8) DDR2-400 and DDR2-533 SDRAM chips with 1.8 V supply voltage.
- VDD = 1.8V, VDDQ = 1.8V
- I / O = SSTL_18
- Line Rate: 400 Mbps per pin or 533 Mbps per pin
- Performance: up to 3200 MB / s or 4300 MB / s on 64-bit systems
- Organization: 4 banks
- Delay for writing data: WRITE latency = READ latency – 1 clock cycle
- Differential strobe
- Off-chip output driver calibration,
- On-die termination (ODT)
Hynix Introduces First 512 Mbit DDR2 Chips
at the end of October, so in terms of developing new chips, the Korean manufacturer
not very far behind competitors. However, considering that, according to analysts,
at the initial stage, DDR2 will be used, apparently, by server manufacturers,
who are more inclined to pay a high price for high speeds, low power consumption
and small size of new-type chips, small time gap in presentation
own developments will not be critical.
Semico Research experts note that if the price of DDR 2 at the initial stage
will be too high, PC makers may abandon the
of this type of memory, since Intel chipsets with DDR 2 support will support
and DDR 1, adding that traditionally the cost of memory in an OEM system should not
exceed 10% of the threshold.