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Compatible Components (from PCs) Popular components in PC builds with the MSI H81M-E35 V2 (MS) Motherboard. CPU. Core i Intel $ Bench 71%, , samples. x. Core i Intel $80 Bench 63%, 33, samples. 54x. MSI H81M-E35 V2 – motherboard – micro ATX – LGA Socket – H81 overview and full product specs on CNET. Welcome to the MSI Global official site. We are the top Gaming gear provider. Welcome to the MSI Global official site. We are the top Gaming gear provider. {{top_nav_1}} Support For H81M-E35 V2. REGISTER NOW. Register now for technical support. menu. Products Service. Download; FAQ; Ask a .

 

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PICMOS: European answer to DARPA

Last year, the defense advanced research projects agency (DARPA), from which, by the way, the Internet grew (originally ? DARPAnet) announced the beginning of the study of the possibility of creating semiconductor chips with optical interconnections. On January 1, a similar project was started by Europe, and although the budget of the program, calculated for three years, is only 4.2 million. Euro, in it, in addition to the Belgian University of Ghent, the CEA / LETI laboratories (g. Grenoble), the University of Lyon, the Technical University of Eindhoven and the Greek National Research Center in Democritos, STMicroelectronics and IMEC, as well as Tracit Technologies will participate.

The European project plans the ultimate goal of integrating optical communication channels into standard CMOS technological processes (CMOS, complementary metal-oxide-semiconductor), hence its name – PICMOS. PICMOS will use indium phosphide LEDs and planar waveguides to enable commercial production on a large scale.

Two main approaches are expected to be explored. In the first, the layer containing the optical bonds will be produced on a separate wafer and bonded to the base semiconductor layer (wafer-to-wafer bonding). In this case, flat silicon strips on a dielectric (made according to the already tested SOI technology) will be used as waveguides. In the second approach, it is planned to use polymer waveguides deposited on the surface of a semiconductor wafer at the end of the CMOS process. In this case, indium phosphide is applied by epitaxy and several additional stages are added to the process.

In parallel, PICMOS parameter specifications and the scope of future chips will be developed.

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