Deus ex directx 10
Unreal engine Direct3D 10 renderer.Unreal engine Direct3D 10 renderer –
Mar 29, · Comparison and gameplayx All MAX. 16x AF, 8x SSAA (Edge-detect)Other control panel settings:Texture filtering quality: High qualityDownload link:ht. Navigate to C:/Program Files (x86)/Steam/steamapps/common/Deus Ex/System/ Tick the dot next to “DirectX 10/11”. Now copy this file  into the System/SweetFX folder, overwriting the original one. Step 7: Final steps The new launcher can be used to get a bigger HUD in the game and automatic FOV depending on your resolution. Mar 07, · Deus Ex series Deus Ex GMDX DirectX 10 goes to software rendering. (3 posts) (3 posts) (3 posts) Pages: 1. This is my favourite topic Now when I try to start GMDX using directx 10, it goes automatically into software rendering, and the game menu is virtually unusable (less than 1 FPS).
Deus ex directx 10.Deus Ex – PCGamingWiki PCGW – bugs, fixes, crashes, mods, guides and improvements for every PC game
Jan 10, · Microsoft DirectX 10 is a group of technologies designed to make Windows-based computers an ideal platform for running and displaying applications rich in multimedia elements such as full-color graphics, video, 3D animation, and rich audio. DirectX includes security and performance updates, along with many new features across all technologies, which can be accessed by . Feb 23, · New version: ?v=-KZq9puzLOEThe original Deux Ex intro with the New Visions (Beta) mod and DirectX 10 :// Feb 19, · Deus Ex Enhanced Deus Ex Enhanced v (DirectX 10 required).
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How to enable DX10? :: Deus Ex: Revision General Discussions
Intel Scientists: Moore’s Law May Become Irrelevant. In a couple of decades
It seems that in a couple of decades the well-known Moore’s Law, according to which the density of transistors in semiconductor chips doubles every two years, will become irrelevant. Oddly enough, a similar statement was made by a group of scientists from Intel itself, within whose walls, in fact, this law was developed by Gordon Moore.
Often faced with such statements due to the debt of work, you gradually get used to them – it’s a well-known thing, there are enough fans to report the next production “end of the world” in any industry. Nevertheless, the article Limits to Binary Logic Switch Scaling – – A Gedanken Model, published by four Intel employees in the November issue of the IEEE Annals (Proceedings of the IEEE), deserves close attention. If only because it deals with the fundamental limitations of the physical dimensions of transistors. In the review issue of the November edition, the very essence of the study is briefly conveyed: since in the usual CMOS logic, electrons are used to change the binary state, sooner or later there will come a limitation under which the use of their energy potential will become impossible. According to preliminary data from scientists, reducing the size of the gates of transistors less than 5 nm will lead to inevitable tunneling. That is, too close the location of the drain and source of the transistors will ultimately lead to the fact that electrons will simply pass through the channel unhindered, no matter what voltage is applied to the gate. Thus, due to the 50% possibility of spontaneous emission, the use of classical transistors as logical switches will become meaningless – the possibility of reliably predicting the behavior of an electron will simply disappear.
When the gate width reaches 5 nm? According to preliminary data, this will happen with the transition to 16 nm process technology – according to the most conservative estimates, approximately in 20221 – 2021. Perhaps after that it will be possible to advance one or two technical processes, however, in fact, for CMOS logic this will mean reaching the physical limit. Let me remind you that the 90 nm process technology introduced by many companies next year will have a transistor gate width of 37 nm on average.
However, it must be admitted that the above considerations are initially based on the use of classical materials for the construction of semiconductors. Accordingly, if the baseline changes, the results may also change. So, according to the latest data, Intel and AMD developers are actively engaged in research in the field of replacing silicon gates of transistors with metal ones. It is quite possible that this technology will be used in the mass production of 45 nm chips – around 2021 – 2021, while the gate width will be around 18 nm.
Another problem that sooner or later may become critical for semiconductor production is overheating of chips. Even if it is possible to solve the problem of tunneling when producing transistors with 4 nm gates (for this, roughly speaking, you will have to apply more energy to the gate of the transistor), then when the 3 nm threshold is reached, the processor will theoretically “burn” itself from the inside.
The most optimistic forecast currently sounds like this: if the problems with tunneling and overheating can be solved, the final limit will come when the gate size of the transistor is about 1.5 nm. Such a number was obtained by calculating the minimum conditions necessary for the “excitation” of an electron. If a gate width of 1.5 nm is reached and a transition to vertical semiconductor structures is reached, semiconductor technology can “stretch” for another six years – until about 2025.
Where next? Scientists have no doubt that a way out will definitely be found. By now, there are plenty of new promising technologies, at least one ? yes it will work. The same notorious “carbon nanotubes” or “silicon nanowires” can become a material for transistors with fantastic characteristics. It is quite possible that the creation of three-dimensional 3D structures will also help extend the life of the current classical semiconductors.