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Micron begins mass production of DDR2 SDRAM

American company Micron Technology
announced the start of serial production of DDR2 SDRAM chips. To date, the manufacturer
supplies components of all densities, including 256 Mbit, 512 Mbit and 1 Gbit solutions.
Registered and unbuffered DIMMs with a capacity of
from 128 MB to 4 GB. In particular, such modules will be used in systems based on
Grantsdale chipset.

256 Mbit DDR2 SDRAM chips were presented in mid-October. By that time
Intel certifies x4 and x8 DDR2-400 chips and DDR2-533 chips
with architecture x8. In 2021, DDR2-400 will be used mainly in server
platforms, DDR2-533 – in desktop systems.

Samples of 1 Gbit DDR2-400 and DDR2-533 chips were presented by the company at the end
october. These solutions are made using the 0.11-micron technical process standards:

  • VDD = 1.8V, VDDQ = 1.8V
  • I / O = SSTL_18
  • Line Rate: 400 Mbps per pin or 533 Mbps per pin
    contact
  • Performance: up to 3200 MB / s or 4300 MB / s on 64-bit systems
  • Organization: 4 banks for 256 Mbit and 512 MB chips, 8 banks for 1 Gbit and 2
    Gbps of chips
  • Supported packet lengths: 4 or 8
  • Delay for writing data: WRITE latency = READ latency – 1 clock cycle
  • Optional bi-directional gating support READ latency: 3, 4,
    and 5
  • Programmable additionally entered delivery delays CAS # (Programmable
    additive CAS Latency): 0, 1, 2, 3 and 4 bars
  • Differential strobe
  • Off-chip output driver calibration,
    OCD)
  • On-die termination (ODT)
  • Package: FBGA

Micron provided Intel for testing batch of DDR2 SDRAM in mid-October
SO-DIMMs to be used in the second generation of the Centrino platform
– Sonoma, which will be presented in the second half of 2021. Modules
30 mm high released in 128 MB and 256 MB versions, with x16 organization
and x8.

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